Quantum Effects for Spintronic Devices Optimization

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dc.contributor.authorSilva, Hugo Gonçalves
dc.date.accessioned2010-12-03T10:52:08Z
dc.date.available2010-12-03T10:52:08Z
dc.date.issued2010-12-03
dc.description.abstractThis work is mainly dedicated to the study of spin dependent transport in mag- netic nanostructures. The principal objective is the optimization of the magnetoresistive performance of such structures, in order to built high density Magnetic Random Access Memories (MRAM). Nevertheless, new resistive properties are also found, that could be useful for another type of non-volatile memory device, in this case, Resistive Random Access Memories (ReRAM). The thesis is basically divided into two parts, the ¯rst one considers the theoretical analysis of multilayered magnetic junctions and the second one is dedicated to the experimental study of magnetic granular multilayers.en
dc.format.extent4857948 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.accesstypelivreen
dc.identifier.authoremailhgsilva@uevora.pt
dc.identifier.numpag199en
dc.identifier.orientadorPogorelov, Yuriy G.
dc.identifier.orientadorAraújo, Joãoo P.
dc.identifier.orientadorGomes, Henrique L.
dc.identifier.scientificarea350en
dc.identifier.tipoTeseTese de Doutoramentoen
dc.identifier.universidadeUniversidade do Portoen
dc.identifier.urihttp://hdl.handle.net/10174/2242
dc.language.isoeng
dc.rightsopenAccessen
dc.subjectSpintronicsen
dc.subjectResistive switchingen
dc.subjectTheoryen
dc.subjectExperimentsen
dc.titleQuantum Effects for Spintronic Devices Optimizationen
dc.typedoctoralThesisen

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